High resolution X-ray spectroscopy using a GaAs pixel detector

被引：14
|
作者：
Owens, A
Bavdaz, M
Peacock, A
Andersson, H
Nenonen, S
Krumrey, M
Puig, A
机构：
[1] ESTEC, Space Sci Dept ESA, NL-2200 AG Noordwijk, Netherlands
[2] Metorex Int Oy, FIN-02630 Espoo, Finland
[3] Phys Tech Bundesanstalt, D-10587 Berlin, Germany
[4] ESRF, Expt Div, F-38043 Grenoble, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 479卷 / 2-3期
关键词：
compound semiconductors; GaAs; arrays; X-rays;
D O I：
10.1016/S0168-9002(01)00933-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
X-ray measurements have been carried out on a single pixel of a small prototype 3 x 3 GaAs array. The device was fabricated from 40 mum thick hyper pure epitaxial material and has a pixel size of 100 x 100 mum(2) with a pitch of 150 pm. Measurements from 2.3 to 27 keV were carried out at the BESSY II and ESRF synchrotron radiation facilities. A room temperature energy resolution of 380 eV FWHM at 5.9 keV was achieved and 289 eV FWHM with only modest cooling (-20degreesC) These are the best figures yet reported for similar devices. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：531 / 534
页数：4
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