Thermodynamic design of energy models of semiconductor devices

In this paper a system of evolution equations for energy models of a semiconductor device is derived in a deductive way from a generally accepted expression for the free energy. Only first principles like the entropy maximum principle and the principle of partial local equilibrium are applied. Particular attention is paid to the inclusion of the electrostatic potential self-consistently. Dynamically ionized trap levels and models with carrier temperatures are regarded. The system of evolution equations has a Lyapunov function due to its compatibility with the corresponding entropy balance equation that contains a positively definite entropy production rate.