Flexible full two-dimensional memristive synapses of graphene/WSe2-xOy/graphene

被引:21
作者
He, Hui-Kai [1 ]
Yang, Fan-Fan [1 ]
Yang, Rui [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
MEMORY;
D O I
10.1039/d0cp03822a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
van der Waals heterostructures realized by stacking different two-dimensional materials offer the possibility to design new devices with atomic-level precision. The realization of memristive synapses based on full two-dimensional materials provides an avenue for developing neuromorphic computing systems with excellent mechanical flexibility in future. Herein, we first develop the flexible full two-dimensional memristive synapse of graphene/WSe2-xOy/graphene exhibiting stable volatile resistive switching. The oxidation of WSe(2)through O(2)plasma treatment plays a key role in improving the memristive performance of the devices. And the switching behavior is associated with the migration of oxygen vacancies at the graphene/WSe(2-x)O(y)interface. Versatile synaptic functions have been realized, including short-term plasticity, long-term plasticity, the transition from short-term plasticity to long-term plasticity and high-pass temporal filtering, with ultralow energy consumption of similar to 16.1 pJ per spike. The flexible full two-dimensional devices fabricated on flexible polyimide substrate show excellent mechanical flexibility, including a good endurance against repeatable bending of 1000 times and a bending strain of 2.5%.
引用
收藏
页码:20658 / 20664
页数:7
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