Inkjet Printing of Liquid Silicon

被引:14
作者
Masuda, Takashi [1 ,2 ]
Nakayama, Maui [1 ]
Saito, Kimihiko [3 ]
Katayama, Hirotaka [4 ]
Terakawa, Akira [4 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
[2] Verein Artworker Org, A-1080 Vienna, Austria
[3] Fukushima Univ, Fac Symbiot Syst Sci, Fukushima 9601296, Japan
[4] Panason Corp, Adv PV Technol Grp, Energy Syst Div, Osaka 5970094, Japan
关键词
coatings; inkjet printing; liquid silicon; semiconductors; thin films; HYDROGENATED AMORPHOUS-SILICON; FILMS; SI;
D O I
10.1002/marc.202000362
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A precursor solution for semiconducting Si called liquid Si (liq-Si) is synthesized, and semiconducting Si is inkjet-printed. Satisfactory inkjet discharge is achieved using liq-Si consisting of liquid-phase polysilane with an average molecular weight of 2500 g mol(-1). The printed liq-Si is converted into amorphous Si by heating at 400 degrees C. The resulting Si film has a flat surface with a root-mean-square roughness of 0.8 nm. These results are extended to n- and p-type Si films by synthesizing liq-Si chemically doped with P and B compounds, respectively. Liq-Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.
引用
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页数:5
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