Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

被引：2

作者：

Zhao, C ^{[1
]}

Chen, YH ^{[1
]}

Cui, CX ^{[1
]}

Xu, B ^{[1
]}

Yu, LK ^{[1
]}

Lei, W ^{[1
]}

Sun, J ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2006年 / 137卷 / 11期

基金：

中国国家自然科学基金;

关键词：

quantum dot; molecular beam epitaxy; kinetic effects; Monte Carlo simulation;

D O I：

10.1016/j.ssc.2005.12.043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：630 / 633

页数：4

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