Influence of Sb, In and Bi dopants on the response of ZnO thick films to VOCs

被引:43
作者
Zhu, BL [1 ]
Xie, CS
Wu, J
Zeng, DW
Wang, AH
Zhao, XZ
机构
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Mat Sci & Engn, Wuhan 430074, Peoples R China
关键词
ZnO; nanoparticles; dopant; gas sensors; VOCs;
D O I
10.1016/j.matchemphys.2005.07.044
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pure ZnO nanoparticle and doped-ZnO nanoparticles with Sb, In, Bi, In-Sb and In-Bi, were prepared by the renovated hybrid induction and laser heating (HILH). The morphological characteristics, phase structure and chemical state of nanoparticles were characterized by TEM, XRD and XPS, respectively. The rnicrostructure, electrical properties and gas-sensing characteristic of the thick film based on nanoparticles were investigated. It was found that the morphology of nanoparticles was influenced by the doping elements Sb, In and Bi. The doping of In, Sb and In-Sb markedly increased the conductivity of ZnO film and its sensitivity to benzene, toluene and xylene. The former was attributed to the substitution of Zn ions by In ions or/and Sb ions, which resulted in generating more free electrons; the latter was closely related to doped samples accommodating a higher density of chemisorbed oxygen. Bi- and In-Bi codoped ZnO films contained Bi2O3 phase, which resulted in their lower conductivities than that of undoped ZnO, but their optimum sensitivity temperature decreased. The response-recovery time of the films to benzene, toluene and xylene was less than 20 s, except the films containing Sb displaying a longer recovery time. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:459 / 465
页数:7
相关论文
共 20 条
[1]  
ANNO Y, 1995, SENSOR ACTUAT B-CHEM, V24, P623
[2]   A highly selective ammonia gas sensor using surface-ruthenated zinc oxide [J].
Aslam, M ;
Chaudhary, VA ;
Mulla, IS ;
Sainkar, SR ;
Mandale, AB ;
Belhekar, AA ;
Vijayamohanan, K .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 75 (02) :162-167
[3]   THE DETECTION AND MEASUREMENT OF CO USING ZNO SINGLE-CRYSTALS [J].
BOTT, B ;
JONES, TA ;
MANN, B .
SENSORS AND ACTUATORS, 1984, 5 (01) :65-73
[4]   The effects of thickness and operation temperature on ZnO:Al thin film CO gas sensor [J].
Chang, JF ;
Kuo, HH ;
Leu, IC ;
Hon, MH .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 84 (2-3) :258-264
[5]  
Dayan NJ, 1997, J MATER SCI LETT, V16, P1952, DOI 10.1023/A:1018503104557
[6]   A thick-film hydrogen sensor based on a ZnO:MoO3 formulation [J].
Dayan, NJ ;
Sainkar, SR ;
Karekar, RN ;
Aiyer, RC .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1998, 9 (03) :360-364
[7]   Formulation and characterization of ZnO:Sb thick-film gas sensors [J].
Dayan, NJ ;
Sainkar, SR ;
Karekar, RN ;
Aiyer, RC .
THIN SOLID FILMS, 1998, 325 (1-2) :254-258
[8]   Surface properties of Cd2SnO4 ceramics doped with both In and Sb: A study by EELS and photoemission spectroscopy [J].
Dou, Y ;
Egdell, RG .
SURFACE SCIENCE, 1997, 377 (1-3) :181-186
[9]   Measurements of VOCs with a semiconductor electronic nose [J].
Horrillo, MC ;
Getino, J ;
Ares, L ;
Robla, JI ;
Sayago, I ;
Gutierrez, FJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (07) :2486-2489
[10]  
Jiao Z, 2002, J INORG MATER, V17, P316