Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

被引:18
作者
Wu, Yunlong [1 ]
Zhang, Liuwan [1 ]
Xie, Guanlin [1 ]
Ni, Jun [1 ]
Chen, Yonghai [2 ]
机构
[1] Tsinghua Univ, Dept Phys, Adv Mat Lab, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO thin films; Pulsed laser deposition; Electrical resistance;
D O I
10.1016/j.ssc.2008.08.009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:247 / 250
页数:4
相关论文
共 23 条
[1]   Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films [J].
Agashe, C ;
Kluth, O ;
Hüpkes, J ;
Zastrow, U ;
Rech, B ;
Wuttig, M .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) :1911-1917
[3]   High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer -: art. no. 012109 [J].
Bellingeri, E ;
Marré, D ;
Pallecchi, I ;
Pellegrino, L ;
Siri, AS .
APPLIED PHYSICS LETTERS, 2005, 86 (01) :012109-1
[4]   Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties [J].
Ellmer, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) :R17-R32
[5]   CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].
FUJIMURA, N ;
NISHIHARA, T ;
GOTO, S ;
XU, JF ;
ITO, T .
JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279
[6]   GRAIN-BOUNDARY SCATTERING IN ALUMINUM-DOPED ZNO FILMS [J].
GHOSH, S ;
SARKAR, A ;
CHAUDHURI, S ;
PAL, AK .
THIN SOLID FILMS, 1991, 205 (01) :64-68
[7]   Effects of RF power variation on properties of ZnO thin films and electrical properties of p-n homojunction [J].
Hwang, DK ;
Bang, KH ;
Jeong, MC ;
Myoung, JM .
JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) :449-455
[8]   Optical and hall properties of ZnO thin films fabricated by using the pulsed laser deposition method at various oxygen pressures and substrate temperatures [J].
Kang, Seong-Jun ;
Shin, Hyun-Ho ;
Yoon, Yung-Sup .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (01) :183-188
[9]   Epitaxial properties of Al-doped ZnO thin films grown by pulsed laser deposition on SrTiO3(001) -: art. no. 075304 [J].
Karger, M ;
Schilling, M .
PHYSICAL REVIEW B, 2005, 71 (07)
[10]   Low temperature electrical transport properties of B-doped ZnO films [J].
Liu, X. D. ;
Jiang, E. Y. ;
Li, Z. Q. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)