Elements of the design and analysis band solar of quantum-dot intermediate cells

被引:87
|
作者
Marti, A. [1 ]
Antolin, E. [1 ]
Canovas, E. [1 ]
Lopez, N. [1 ]
Linares, P. G. [1 ]
Luque, A. [1 ]
Stanley, C. R. [2 ]
Farmer, C. D. [2 ]
机构
[1] ETSIT Madrid, Inst Energia Solar, Madrid 28040, Spain
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
关键词
quantum dots; intermediate band; photovoltaics; solar cells; solar concentration; novel concepts; InAs; GaAs; efficiency; circuit model;
D O I
10.1016/j.tsf.2007.12.064
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have demonstrated recently that two below bandgap energy photons can lead to the creation of one electron-hole pair in a quantum-dot intermediate band solar cell (QD-IBSC). To be effective, the devices used in the experiments were designed to a) half-fill the intermediate band with electrons; b) to allocate the quantum dots in a flat-band potential region, and c) to prevent tunnelling from the n emitter into the intermediate band. QD-IBSCs have also shown degradation in their open-circuit voltage when compared with their counterparts without quantum dots. This loss is due to the presence of the intermediate band (113) together with the incapacity of the quantum dots to absorb sufficient below bandgap light as to contribute significantly to the photogenerated current. It is predicted, nevertheless, that this voltage loss will diminish if concentration light is used leading to devices with efficiency higher than single gap solar cells. A circuit model that includes additional recombination levels to the ones introduced by the IB is described to support this discussion. (c) 2007 Elsevier B.V All rights reserved.
引用
收藏
页码:6716 / 6722
页数:7
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