The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

被引：3

作者：

Kryzhanovskaya, N. V. ^{[1
,2
]}

Lebedev, M. V. ^{[3
]}

L'vova, T. V. ^{[3
]}

Kudashova, Yu. V. ^{[1
]}

Shostak, I. I. ^{[1
]}

Moiseev, E. I. ^{[1
,2
]}

Zhukov, A. E. ^{[1
,2
,4
]}

Maximov, M. V. ^{[1
,2
,3
]}

Kulagina, M. M. ^{[3
]}

Nadtochiy, A. M. ^{[1
]}

Troshkov, S. I. ^{[3
]}

Blokhin, A. A. ^{[2
]}

Bobrov, M. A. ^{[3
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 195251, Russia

[2] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[3] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Russian Acad Sci, St Petersburg Sci Ctr, St Petersburg 199034, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

SIDEWALL RECOMBINATION; ACTIVE-REGION; LASERS;

D O I：

10.1134/S106378501507010X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In0.15Ga0.85As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.

引用

页码：654 / 657

页数：4

共 9 条

[1] Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes
Boroditsky, M
Gontijo, I
Jackson, M
Vrijen, R
Yablonovitch, E
Krauss, T
Cheng, CC
Scherer, A
Bhat, R
Krames, M
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3497 - 3504
[2] Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots
Fiore, A
Rossetti, M
Alloing, B
Paranthoen, C
Chen, JX
Geelhaar, L
Riechert, H
[J]. PHYSICAL REVIEW B, 2004, 70 (20): : 205311 - 1
[3] SILICON-NITRIDE ENCAPSULATION OF SULFIDE PASSIVATED GAAS/ALGAAS MICRODISK LASERS
HOBSON, WS
REN, F
MOHIDEEN, U
SLUSHER, RE
SCHNOES, ML
PEARTON, SJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (03): : 642 - 645
[4] SINX SULFIDE PASSIVATED GAAS/ALGAAS MICRODISK LASERS
HOBSON, WS
MOHIDEEN, U
PEARTON, SJ
SLUSHER, RE
REN, F
[J]. ELECTRONICS LETTERS, 1993, 29 (25) : 2199 - 2200
[5] Kapon E., 1999, Semiconductor Lasers I: Fundamentals
[6] Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
Maximov, Mikhail V.
Kryzhanovskaya, Natalia V.
Nadtochiy, Alexey M.
Moiseev, Eduard I.
Shostak, Ivan I.
Bogdanov, Andrey A.
Sadrieva, Zarina F.
Zhukov, Alexey E.
Lipovskii, Andrey A.
Karpov, Denis V.
Laukkanen, Janne
Tommila, Juha
[J]. NANOSCALE RESEARCH LETTERS, 2014, 9
[7] Reduced surface sidewall recombination and diffusion in quantum-dot lasers
Moore, Stephen A.
O'Faolain, Liam
Cataluna, Maria Ana
Flynn, Michael B.
Kotlyar, Maria V.
Krauss, Thomas F.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) : 1861 - 1863
[8] Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
Novikov, II
Gordeev, NY
Karachinskii, LY
Maksimov, MV
Shernyakov, YM
Kovsh, AR
Krestnikov, IL
Kozhukhov, AV
Mikhrin, SS
Ledentsov, NN
[J]. SEMICONDUCTORS, 2005, 39 (04) : 477 - 480
[9] Sidewall recombination velocity in GaInAsP/InP quantum-well lasers with wire-like active region fabricated by wet-chemical etching and organo-metallic vapor-phase-epitaxial regrowth
Tamura, M
Kojima, T
Ando, T
Nunoya, N
Tamura, S
Arai, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A): : 6569 - 6574

← 1 →