Air gap formation by UV-assisted decomposition of CVD material

被引：11

作者：

Pantouvaki, M. ^{[1
]}

Humbert, A. ^{[2
]}

VanBesien, E. ^{[1
]}

Camerotto, E. ^{[1
]}

Travaly, Y. ^{[1
]}

Richard, O. ^{[1
]}

Willegems, M. ^{[1
]}

Volders, H. ^{[1
]}

Kellens, K. ^{[1
]}

Daamen, R. ^{[2
]}

Hoofman, R. J. O. M. ^{[2
]}

Beyer, G. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] NXP TSMC Res Ctr, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 10期

关键词：

Air gaps; Low-k; Sacrificial material; Capacitance reduction; CVD; Decomposition;

D O I：

10.1016/j.mee.2008.05.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sacrificial material deposited by CVD is used to demonstrate air gap formation in single damascene structures by UV-assisted decomposition. The material is removed through a porous low-k cap, after completion of the damascene scheme. The porosity of the low-k cap is shown to be critical for efficient air gap formation. Capacitance reduction of similar to 50% is demonstrated using this technique compared to conventional SiOC(H) interconnects and an effective dielectric constant of 1.7 is extrapolated. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2071 / 2074

页数：4

共 9 条

[1] Integration of a 3 level Cu-SiO2 air gap interconnect for sub 0.1 micron CMOS technologies [J].

Arnal, V ;

Torres, J ;

Gayet, P ;

Gonella, R ;

Spinelli, P ;

Guillermet, M ;

Reynard, JP ;

Vérove, C .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :298-300

[2] Air-gap fabrication using a sacrificial polymeric thin film synthesized via initiated chemical vapor deposition [J].

Chan, K ;

Gleason, KK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (04) :C223-C228

[3] Multi-Level Air Gap Integration for 32/22nm nodes using a Spin-on Thermal Degradable Polymer and a SiOC CVD Hard Mask [J].

Daamen, R. ;

Bancken, P. H. L. ;

Badaroglu, D. Emur ;

Michelon, J. ;

Nguyen, V. H. ;

Verhden, G. J. A. M. ;

Humbert, A. ;

Waeterloos, J. ;

Yang, A. ;

Cheng, J. K. ;

Chen, L. ;

Martens, T. ;

Hoofman, R. J. O. M. .

PROCEEDINGS OF THE IEEE 2007 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2007, :61-+

[4] The evolution of multi-level air gap integration towards 32 nm node interconnects [J].

Daamen, R. ;

Bancken, P. H. L. ;

Nguyen, V. H. ;

Humbert, A. ;

Verheijden, G. J. A. M. ;

Hoofman, R. J. O. M. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2177-2183

[5] Air gap integration for the 45nm node and beyond [J].

Daamen, R ;

Verheijden, GJAM ;

Bancken, PHL ;

Vandeweyer, T ;

Michelon, J ;

Hoang, VN ;

Hoofman, RJOM ;

Gallagher, MK .

PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2005, :240-242

[6] Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach [J].

Gaillard, F. ;

de Pontcharra, J. ;

Gosset, L. G. ;

Lyan, Ph. ;

Bouchu, D. ;

Daamen, R. ;

Louveau, O. ;

Besson, P. ;

Passemard, G. ;

Torres, J. .

MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) :2309-2313

[7] Self-aligned multi-level air gap integration [J].

Hoofman, R. J. O. M. ;

Caluwaerts, R. ;

Michelon, J. ;

Bernabe, P. Herrero ;

de Mussy, J. P. Gueneau ;

Bruynseraede, C. ;

Lee, J. M. ;

List, S. ;

Bancken, P. H. L. ;

Beyer, G. .

MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) :2150-2154

[8]

Humbert A, 2006, MATER RES SOC SYMP P, V914, P259

[9] Process and reliability of air-gap Cu interconnect using 90-nm node technology [J].

Noguchi, J ;

Sato, K ;

Konishi, N ;

Uno, S ;

Oshima, T ;

Ishikawa, K ;

Ashihara, H ;

Saito, T ;

Kubo, M ;

Tamaru, T ;

Yamada, Y ;

Aoki, H ;

Fujiwara, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (03) :352-359

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