Band-edge photoluminescence in nanocrystalline ZnO: In films prepared by electrostatic spray deposition

被引：28
作者：
Chi, DH
Binh, LTT
Binh, NT
Khanh, LD
Long, NN
机构：
[1] Hanoi Univ Sci, Fac Phys, Hanoi, Vietnam
[2] Japan Adv Inst Sci & Technol, Ctr Strateg Dev Sci & Technol, Tatsunokuchi, Ishikawa, Japan
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 08期
关键词：
semiconductors; chemical synthesis; luminescence;
D O I：
10.1016/j.apsusc.2005.04.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnO:In films are successfully prepared by using the electrostatic spray deposition technique. X-ray diffraction indicates that the ZnO:In films have a polycrystalline hexagonal wurtzite structure with lattice parameters a = 3.267 angstrom and c = 5.209 angstrom. Photoluminescence properties of the films are investigated in the temperature range of 11.6-300 K, showing strong luminescence in the whole range of temperature. The temperature dependence of the photoluminescence are carried out with full profile fitting of spectra, which clearly shows that the ultraviolet (UV) emission in In-doped ZnO films at low temperature are attributed to emission of a neutral donor-bound exciton (D degrees X) and recombination of donor-acceptor pairs (DAP), while the UV emission at room temperature originates from radiative transition of an electron bound on a donor to the valence band. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：2770 / 2775
页数：6
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