Structural and electrical properties of PbTiO3 thin films grown on silicon substrates

Thin films of ceramic materials take an important place in microelectronics and in microtechnologies. They present many properties which can be used for the realization of new devices and sensors. We present the growth of PbTiO3 thin films on silicon and platinized silicon substrates by RF magnetron sputtering. The electrode deposition and thickness were optimized to produce metallization without the defects which are frequently observed with Pt electrodes. The influence of the bottom electrodes on the film properties in terms of structure and microstructure was analysed. The PbTio(3) crystallization was optimized for the two types of substrates: Si/SiO2 and Si/SiO2/Ti/Pt. The electrical properties of the films and in particular the ferroelectricity were evaluated.