Electro-Optical Performances of p-on-n and n-on-p Silicon Photomultipliers

被引：26

作者：

Mazzillo, Massimo ^{[1
]}

Ronzhin, Anatoly ^{[2
]}

Los, Sergey ^{[2
]}

Abbisso, Salvatore ^{[1
]}

Sanfilippo, Delfo ^{[1
]}

Valvo, Giusy ^{[1
]}

Carbone, Beatrice ^{[1
]}

Piana, Angelo ^{[1
]}

Fallica, Giorgio ^{[1
]}

Albrow, Michael ^{[2
]}

Ramberg, Erik ^{[2
]}

机构：

[1] STMicroelectronics, IMS, R&D, I-95121 Catania, Italy

[2] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 12期

关键词：

Cross talk; photon detection efficiency (PDE); p-on-n and n-on-p junctions; silicon photomultipliers (SiPMs); timing jitter; DETECTION EFFICIENCY;

D O I：

10.1109/TED.2012.2218250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon photomultipliers (SiPMs) are fabricated in two different configurations: p-on-n and n-on-p junctions. p-on-n SiPMs turn out to be more suitable for application in positron emission tomography (PET), due to their higher sensitivity in blue wavelength range where common PET scintillators have their emission spectrum. In this paper, we report on the electro-optical performances of the first p-on-n SiPMs manufactured at STMicroelectronics, Catania. The results obtained on these devices are compared with those measured on the standard n-on-p technology.

引用

页码：3419 / 3425

页数：7

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