Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

被引：43

作者：

Maehne, H. ^{[1
]}

Berger, L. ^{[2
]}

Martin, D. ^{[1
]}

Klemm, V. ^{[2
]}

Slesazeck, S. ^{[1
]}

Jakschik, S. ^{[1
]}

Rafaja, D. ^{[2
]}

Mikolajick, T. ^{[1
,3
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] TU Bergakad Freiberg, Inst Mat Sci, D-09599 Freiberg, Germany

[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01187 Dresden, Germany

来源：

SOLID-STATE ELECTRONICS | 2012年 / 72卷

关键词：

Niobium pentoxide; Resistive switching; Resistive RAM; Crystalline; Amorphous; Schottky diode;

D O I：

10.1016/j.sse.2012.01.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the correlation between the crystallinity of reactively sputtered Nb2O5 layers on Pt bottom electrode and their resistive switching behavior was investigated. It was found that the amorphous phase can transformed to an orthorhombic phase by annealing in argon at 650 degrees C. Smooth surfaces of the crystalline samples with RMS roughness of 1 nm were produced. By using the stack Al/Nb2O5/Pt a Schottky diode was produced and a barrier height of 1.0 eV for the argon annealed sample was found. For the amorphous sample, a Frenkel-Poole emission mechanism was found with the activation energy of 0.21 eV. After an electric forming process a filamentary resistive switching was observed for both types of samples. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：73 / 77

页数：5

共 18 条

[1] Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].