Synthesis of SiC via low-temperature heating of graphite and Si with Na flux

被引：1

作者：

Morito, Haruhiko ^{[1
]}

Yamane, Hisanori ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2013年 / 121卷 / 1419期

关键词：

Silicon carbide; Sodium; Graphite; Powder; Stacking faults; CHEMICAL-VAPOR-DEPOSITION; LIQUID-PHASE EPITAXY; SILICON-CARBIDE; 3C-SIC CRYSTALS; SINGLE-CRYSTALS; STACKING-FAULTS; GROWTH; POWDER; CERAMICS; SYSTEM;

D O I：

10.2109/jcersj2.121.930

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC was prepared by heating a mixture of graphite and Si powders with sodium over the temperature range 1173-1273 K and was characterized via X-ray diffraction, electron microscopy, and electron diffraction. The sample prepared at 1273 K exhibited aggregates of truncated hexagonal pyramid-shaped SiC crystals that were a few hundreds nanometers in size, as evidenced by scanning electron microscopy. Transmission electron microscopy and electron diffraction revealed that the crystals contained stacking faults along [111] of the cubic lattice of beta-type. (C)2013 The Ceramic Society of Japan. All rights reserved.

引用

页码：930 / 933

页数：4

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