Carrier Dynamics and Modulation Capabilities of 1.55-μm Quantum-Dot Lasers

被引：18
作者：
Gready, David [1 ]
Eisenstein, Gadi [1 ]
机构：
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 04期
关键词：
Carrier dynamics; quantum dots (QDs); semiconductor lasers; GAIN DYNAMICS; INJECTION;
D O I：
10.1109/JSTQE.2013.2238610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a spatially resolved model for multilayer quantum-dot (QD) lasers. The detailed model incorporates the homogeneous and inhomogeneous gain broadenings. Using this model, we examined effects of various structural parameters on the modulation response. Modulation bandwidth is increased with shortening the distance from the contacts to the active area, shortening the distance between QD layers, and with increasing the number of QD layers. The number of QD layers should be carefully chosen in order to prevent a transport bottleneck. Asymmetric positioning of the QD layers with respect to the waveguide core was found to improve the modulation bandwidth.
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页数：7
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