High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

被引：34
作者：
Bai, Zhiming [1 ]
Yan, Xiaoqin [1 ]
Chen, Xiang [1 ]
Zhao, Kun [1 ]
Lin, Pei [1 ]
Zhang, Yue [1 ,2 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Key Lab New Energy Mat & Technol, Beijing 100083, Peoples R China
来源：
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL | 2014年 / 24卷 / 01期
关键词：
ZnO; Photodetector; Network; Sensitivity; Response time; UV PHOTODETECTORS; PHOTOLUMINESCENCE;
D O I：
10.1016/j.pnsc.2014.01.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultraviolet (UV) photodetectors (PDs) based on ZnO micro/nanowire (MNW) networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5 x 10(3)) for 365 nm UV light with a fast recovery time (0.2s) at a reverse bias voltage of 2V. The light induced modulation of Schottky barrier and MNW-MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on-off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon. (C) 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
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页码：1 / 5
页数：5
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