Fast polarization switching with memory effect in a vertical cavity surface emitting laser subject to modulated optical injection

被引：33

作者：

Boiko, DL ^{[1
]}

Stéphan, GM ^{[1
]}

Besnard, P ^{[1
]}

机构：

[1] Ecole Natl Sci Appliquees & Technol, CNRS, UPRESA 6082, Lab Optron, F-22305 Lannion, France

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.371429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization state of a vertical cavity surface emitting laser (VCSEL) output was driven by means of optical injection from another VCSEL. The bistability inherent to polarization locking allowed us to generate a memory effect. The control parameter was the modulated bias current of the maser laser and effects were shown to exist at frequencies up to 1 GHz. (C) 1999 American Institute of Physics. [S0021-8979(99)01120-2].

引用

页码：4096 / 4099

页数：4

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