Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer

被引：28

作者：

Chang, Hsuan-Chun ^{[2
]}

Lee, Wen-Ya ^{[2
]}

Tai, Yian ^{[1
]}

Wu, Kuang-Wei ^{[1
]}

Chen, Wen-Chang ^{[2
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Chem Engn, Taipei 106, Taiwan

来源：

NANOSCALE | 2012年 / 4卷 / 20期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ALTERNATING CONJUGATED COPOLYMERS; ELECTRICAL BISTABILITY; CHARGE-TRANSFER; DONOR; PERFORMANCE; VOLTAGE; MOBILITY; DEVICES;

D O I：

10.1039/c2nr30882g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a novel approach to improve the characteristics of the gold nanoparticle-based organic transistor memory devices by using self-assembled monolayers (SAM) with different functional groups as interfacial modifier. SAM-based interfacial engineering significantly improved the hysteresis, memory window, and on/off ratio of a nano floating gate memory (NFGM) at zero gate voltage. This NFGM showed a large memory window of up to 190 V and on/off current ratio of 10(5) during writing and erasing with an operation voltage of 100 V of gate bias in a short time, less than 1 s. Furthermore, the devices show excellent nonvolatile behavior for bistable switching. The ON and OFF state can be stably maintained for 10(3) s with an I-on/I-off current ratio of 10(6) for a pentafluorophenyl trimethoxysilane modified device. The results suggested the importance of SAM-modified interface for the memory performance of NFGMs.

引用

页码：6629 / 6636

页数：8

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