Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE

被引：28

作者：

Nagamatsu, Kentaro ^{[1
]}

Okada, Narihito ^{[1
]}

Kato, Naofumi ^{[1
]}

Sumii, Takafumi ^{[1
]}

Bandoh, Akira ^{[2
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Amano, Hiroshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] Corp R&D Ctr, Midori Ku, Chiba 2670056, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期

关键词：

D O I：

10.1002/pssc.200779226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN layers were directly grown on sapphire substrates with slightly different miscut angles from the c-plane by metalorganic vapor phase epitaxy at 1300 degrees C. By X-ray diffraction analysis, the structural quality was found to improve with the increase in substrate off-angle. When the substrate off-angle was 0.5 degrees, the X-ray rocking Curve (XRC) full widths at half maximum (FWHMs) of symmetric and asymmetric planes were 170 and 550 arcsec, respectively. At smaller off-angle, XRC-FWHMs were wider. When the substrate off-angle was zero, the XRC-FWHM was considerably inferior to that on 0.5o-off-angle sapphire. The surface morphology was investigated. Atomic steps were observed oil the substrates with a small misorientation. In contrast, macro steps appeared on larger-off-angle sapphire substrates. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3048 / +

页数：2

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