Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

被引：50

作者：

Li, D. ^{[1
]}

Tang, L. ^{[1
]}

Edmunds, C. ^{[1
]}

Shao, J. ^{[1
]}

Gardner, G. ^{[2
,3
]}

Manfra, M. J. ^{[1
,2
,3
,4
]}

Malis, O. ^{[1
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期

基金：

美国国家科学基金会;

关键词：

REVERSE-BIAS LEAKAGE; BULK GAN; INSTABILITIES;

D O I：

10.1063/1.4729819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates grown by hydride-vapor phase epitaxy. Clear, exactly reproducible, negative-differential resistance signatures were observed from 4 x 4 mu m(2) devices at 1.5V and 1.7V at 77K. The relatively small value of the maximum peak-to-valley ratio (1.03) and the area dependence of the electrical characteristics suggest that charge transport is affected by leakage paths through dislocations. However, the reproducibility of the data indicates that electrical traps play no significant role in the charge transport in resonant tunneling diodes grown by molecular-beam-epitaxy under Ga-rich conditions on free-standing GaN substrates. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729819]

引用

页数：4