Cluster emission under femtosecond laser ablation of silicon

被引：48

作者：

Bulgakov, AV

Ozerov, I

Marine, W ^{[1
]}

机构：

[1] Fac Sci Luminy, CNRS, UMR 6631, GPEC, Case 901, F-13288 Marseille 9, France

[2] Russian Acad Sci, Inst Thermophys, SB, Novosibirsk 630090, Russia

来源：

THIN SOLID FILMS | 2004年 / 453卷

关键词：

silicon; nanoclusters; fermosecond laser ablation; coulomb explosion;

D O I：

10.1016/j.tsf.2003.11.136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rich populations of clusters have been observed after fermosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Si, (up to n = 6) and their cations Si-n(+) (up to n = 10) has been observed. The clusters are formed even at very low laser fluences, below the ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：557 / 561

页数：5

共 9 条

[1] Femtosecond laser ablation of silicon-modification thresholds and morphology [J].