Proton-induced damage in gallium nitride-based Schottky diodes

被引：31

作者：

Karmarkar, AP

White, BD

Buttari, D

Fleetwood, DM

Schrimpf, RD

Weller, RA

Brillson, LJ

Mishra, UK

机构：

[1] Vanderbilt Univ, Interdisciplinary Program Mat Sci, Nashville, TN 37235 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期

关键词：

gallium (Ga) alloys; Schottky diodes; proton radiation effects;

D O I：

10.1109/TNS.2005.860668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton irradiation decreases the doping concentration and increases the ideality factor and series resistance, but has very little effect on the Schottky barrier height in n-Gallium nitride Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher nonionizing energy loss. The displacement damage recovers during annealing. Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation.

引用

收藏

页码：2239 / 2244

页数：6

相关论文

共 19 条

[1] Detection of interstitial Ga in GaN [J].

Chow, KH ;

Watkins, GD ;

Usui, A ;

Mizuta, M .

PHYSICAL REVIEW LETTERS, 2000, 85 (13) :2761-2764

[2] The toughest transistor yet [J].

Eastman, LF ;

Mishra, UK .

IEEE SPECTRUM, 2002, 39 (05) :28-+

[3] Radiation induced defects in MOVPE grown n-GaN [J].

Goodman, SA ;

Auret, FD ;

Koschnick, FK ;

Spaeth, JM ;

Beaumont, B ;

Gibart, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 :100-103

[4] Electrical defects introduced during high-temperature irradiation of GaN and AlGaN [J].

Hayes, M ;

Auret, FD ;

Wu, L ;

Meyer, WE ;

Nel, JM ;

Legodi, MJ .

PHYSICA B-CONDENSED MATTER, 2003, 340 :421-425

[5] Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors [J].

Hu, XW ;

Karmarkar, AP ;

Jun, B ;

Fleetwood, DM ;

Schrimpf, RD ;

Geil, RD ;

Weller, RA ;

White, BD ;

Bataiev, M ;

Brillson, LJ ;

Mishra, UK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :1791-1796

[6] The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors [J].

Hu, XW ;

Choi, BK ;

Barnaby, HJ ;

Fleetwood, DM ;

Schrimpf, RD ;

Lee, SC ;

Shojah-Ardalan, S ;

Wilkins, R ;

Mishra, UK ;

Dettmer, RW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (02) :293-297

[7] Radiation hardness of gallium nitride [J].

Ionascut-Nedelcescu, A ;

Carlone, C ;

Houdayer, A ;

von Bardeleben, HJ ;

Cantin, JL ;

Raymond, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :2733-2738

[8] Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers [J].

Karmarkar, AP ;

Jun, B ;

Fleetwood, DM ;

Schrimpf, RD ;

Weller, RA ;

White, BD ;

Brillson, LJ ;

Mishra, UK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3801-3806

[9] Proton energy dependence of the light output in gallium nitride light-emitting diodes [J].

Khanna, SM ;

Estan, D ;

Erhardt, LS ;

Houdayer, A ;

Carlone, C ;

Lonascut-Nedelcescu, A ;

Messenger, SR ;

Walters, RJ ;

Summers, GP ;

Warner, JH ;

Jun, I .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) :2729-2735

[10] Effect of irradiation temperature and ion flux on electrical isolation of GaN [J].

Kucheyev, SO ;

Boudinov, H ;

Williams, JS ;

Jagadish, C ;

Li, G .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4117-4120