Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

被引：1
作者：
Papis-Polakowska, E. [1 ]
Kaniewski, J. [1 ]
Szade, J. [2 ]
Rzodkiewicz, W. [1 ]
Jasik, A. [1 ]
Reginski, K. [1 ]
Wawro, A. [3 ]
机构：
[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Silesian Univ, Chelkowski Inst Phy, Katowice, Poland
[3] Polish Acad sci, Inst Phys, Warsaw, Poland
来源：
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
关键词：
superlattice; GaSb; surface; interface; X-ray Photoelectron Spectroscopy; GROWTH; INSB;
D O I：
10.1016/j.phpro.2012.03.540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) have been used to extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provide precise information from topmost layers of structure and allow excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied.
引用
收藏
页码：184 / 190
页数：7
相关论文
共 21 条
  • [1] Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
    Christol, P.
    Cervera, C.
    Rodriguez, J. B.
    Jaworowicz, K.
    Ribet-Mohamed, I.
    [J]. QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII, 2011, 7945
  • [2] Hermstreet L. A., 1993, J VAC SCI TECHNOLOG, V11, P1893
  • [3] Characterization of the InAsSb/GaSb superlattices by Fourier transform infrared spectroscopy
    Juang, FS
    Su, YK
    Yu, HH
    Liu, KJ
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2003, 78 (03) : 620 - 624
  • [4] Kubacka-Traczyk J, 2009, OPT APPL, V39, P875
  • [5] Influence of ion beam on optical properties of GaAs: Calculation using the fractional-derivative-spectrum method
    Kulik, Miroslaw
    Rzodkiewicz, Witold
    Drozdziel, Andrzej
    Pyszniak, Krzysztof
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 4, 2011, 8 (04): : 1315 - 1318
  • [6] Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions
    Losurdo, Maria
    Capezzuto, Pio
    Bruno, Giovanni
    Brown, April S.
    Brown, Terence
    May, Gary
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
  • [7] Mouldr J.F., 1995, HANDBOOK OF X RAY PH
  • [8] Papis E, 2009, OPT APPL, V39, P787
  • [9] Papis-Polakowska E., 2005, Electron Technol. Internet J, V37/38, P1
  • [10] Refractive indices of InSb, InAs, GaSb, InAsxSb1-x, and In1-xGaxSb: Effects of free carriers
    Paskov, PP
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) : 1890 - 1898
123