Bulk modulus of group-IV and its compound semiconductors

被引：7

作者：

Dutta, Madhu Sudan ^{[1
]}

Pathak, Mritunjai Kr. ^{[1
]}

Mahto, Parmanand ^{[1
]}

机构：

[1] Vinoba Bhave Univ, Univ Dept Phys, Hazaribagh 825301, Jharkhand, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 695卷

关键词：

Bond energy; Bond strength; Bulk modulus; Vegard's law; OPTICAL-PROPERTIES; CHARGE-DENSITY; BAND-GAP; PRESSURE; ALLOYS; HETEROSTRUCTURES; STABILITY; CONSTANTS; IONICITY; CRYSTALS;

D O I：

10.1016/j.jallcom.2016.11.415

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A correlation is established between the bulk modulus and inter-atomic spacing of group-IV semiconductors involving their bond energy. Universal parameter tight binding approach is employed in evaluating the bond energy of the systems. In case of alloys, Vegard's law is utilised to calculate the lattice constants from which average inter-atomic spacings are obtained. Results are in good agreement with the experimental and reported values. (C) 2016 Published by Elsevier B.V.

引用

页码：3547 / 3551

页数：5

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