Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells

被引：0

作者：

Yang, G. F. ^{[1
,2
]}

Chen, P. ^{[1
,2
,3
]}

Yu, Z. G. ^{[1
,2
]}

Liu, B. ^{[1
,2
]}

Xie, Z. L. ^{[1
,2
]}

Xiu, X. Q. ^{[1
,2
]}

Wu, Z. L. ^{[3
]}

Xu, F. ^{[3
]}

Xu, Z. ^{[3
]}

Hua, X. M. ^{[1
,2
]}

Han, P. ^{[1
,2
]}

Shi, Y. ^{[1
,2
]}

Zhang, R. ^{[1
,2
]}

Zheng, Y. D. ^{[1
,2
]}

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ & Yangzhou, Inst Optoelect, Yangzhou 225009, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 109卷 / 02期

关键词：

PHASE-SEPARATION; RECOMBINATION DYNAMICS; LOCALIZED EXCITONS; SELECTIVE GROWTH; DOTS; BLUE; STRAIN; LAYERS;

D O I：

10.1007/s00339-012-7112-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Uniform InGaN nanodots were successfully grown on SiO2 pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two periods of InGaN/GaN quantum wells on the surface of InGaN nanodots, nanodot structure still formed in the InGaN well layer caused by the enhanced phase separation phenomenon. Dual-color emissions with different behavior were observed from photoluminescence (PL) spectrum of InGaN nanodots hybrid with InGaN/GaN quantum wells. A significant blueshift and a linewidth broadening were measured for the low-energy peak as the increase of PL excitation power, while a slight blueshift and a linewidth narrowing occurred for the high-energy peak. Accordingly, these two peaks were assigned to be from the In-rich nanodots and quantized state transition from the InGaN/GaN quantum wells with indium content, respectively.

引用

页码：337 / 341

页数：5

共 27 条

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