Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films

被引：311

作者：

Bansal, Namrata ^{[1
,3
]}

Kim, Yong Seung ^{[2
]}

Brahlek, Matthew ^{[2
]}

Edrey, Eliav ^{[2
]}

Oh, Seongshik ^{[2
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[3] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 11期

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; SURFACE; STATES; BI2TE3; LIMIT;

D O I：

10.1103/PhysRevLett.109.116804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

With high quality topological insulator Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to similar to 8 QL(where QL refers to quintuple layer, 1 QL approximate to 1 nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at similar to 3.0 X 10(13) cm(-2) down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at similar to 8 X 10(12) cm(-2) only down to similar to 8 QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.

引用

页数：5

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