Spin-bias modulated Kondo effect in an interacting quantum dot

被引：0

作者：

Li, Yuan ^{[1
,2
]}

Jalil, M. B. A. ^{[1
,3
]}

Tan, Seng Ghee ^{[3
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore

[2] Hangzhou Dianzi Univ, Dept Phys, Hangzhou 310018, Peoples R China

[3] Natl Univ Singapore, Data Storage Inst, Singapore 117608, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

DEPENDENT TRANSPORT; ANDERSON IMPURITY; MODEL;

D O I：

10.1063/1.3675617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the transport properties of an interacting quantum dot modulated by spin bias by means of the Keldysh nonequilibrium Green's function method. The charge and spin differential conductance (G(c) and G(s), respectively) are calculated for three kinds of spin-bias configurations. Our calculations show the presence of conductance plateaus and steps in G(c) and Kondo peaks in G(s). These conductance characteristics may be explained by considering the Kondo peaks in the density of states. By analyzing the different spin and charge conductance at low temperature, one can characterize the configuration and magnitude of spin accumulation in the leads. (C) 2012 American Institute of Physics. [doi:10.1063/1.3675617]

引用

页数：3

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