Ferroelectric photodiode and photo-enhanced tunneling

被引：0
|
作者：
Okano, M [1 ]
Watanabe, Y [1 ]
Masunaga, S [1 ]
机构：
[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A substantial photovoltaic effect was found at room temperature in heterostructures of ferroelectric oxides that have been regarded as insulators. Especially, the Pb(Ti,Zr)O-3/SrTiO3:Nb heterostructures exhibited the current-voltage characteristics for the photovoltaic effect in a typical pn junction. Ile external conversion efficiency of a preliminary non-optimized device is for ultraviolet (UV) light is 0.6 - 0.8 % Additionally, these heterostructures show a band to band tunneling than can be tuned by pulse voltages. The results support also the formation of a pn like junction by ferroelectric oxides recently proposed [1,2].
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页码：1707 / 1708
页数：2
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