A BiCMOS Implementation of Noise Canceling Low Noise Amplifier for Wideband Applications

被引：0

作者：

Lu, Zhenghao ^{[1
]}

Yu, X. P. ^{[2
]}

Lim, W. M. ^{[2
]}

Liu, Y. ^{[2
]}

Yeo, Kiat Seng ^{[2
]}

机构：

[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

关键词：

Low noise amplifier; noise cancelation; wideband; BiCMOS; DISTORTION CANCELLATION; EMPLOYING NOISE; CMOS LNA; RECEIVERS; FEEDBACK;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report in this paper a BiCMOS realization of the well-known noise canceling CMOS low noise amplifier first proposed in [1]. The ingenious design proposed in [1] features wonderful merits such as ultra-low noise, wideband and very good linearity. In order to achieve the noise cancelation point, a large amount of biasing current is needed in CMOS implementation. We design BiCMOS implementation of this famous noise canceling topology, which achieves significant biasing current reduction. Simulated in Tower Jazz 0.18 mu m SiGe technology, the designed wideband LNA operates up to 5.2GHz with 17.5dB gain and dissipates about 10mA current from a single 1.8V supply. The simulated IIP3 is +5dBm with a noise figure of less than 2.5dB when matched to 50 Omega and the chip layout area is less than 0.3mm(2) excluding pads.

引用

页数：2

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