A study of high-quality freestanding diamond films grown by MPCVD

被引:49
作者
Ding, Ming Q. [1 ]
Li, Lili [1 ]
Feng, Jinjun [1 ]
机构
[1] Beijing Vacuum Elect Res Inst, Natl Key Lab Sci & Technol Vacuum Elect, Beijing 100016, Peoples R China
关键词
Microwave Plasma Chemical Vapor Deposition; Freestanding diamond films; Texture; Optical transmission; CHEMICAL-VAPOR-DEPOSITION; HIGH-PRESSURE; HIGH-POWER; MICROWAVE; SILICON; REACTOR;
D O I
10.1016/j.apsusc.2012.02.025
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The fabrication process of high-quality freestanding diamond films grown by Microwave Plasma Chemical Vapor Deposition (MPCVD) was studied. Under the optimal condition, freestanding diamond films 55 mm in diameter with a thickness up to 1 mm were fabricated, showing an excellent crystalline structure as examined from Raman and X-Ray Diffraction (XRD) spectra. For most processing conditions, including substrate temperatures varied from 800 to 1050 degrees C, the films were found in a [1 1 1] preferential texture, whereas [2 2 0] and [0 0 1] film textures occurred in some special cases. Optical measurements of one side polished diamond films showed a cutoff wavelength 225 nm, and a transmission >= 70% at lambda >= 2.5 mu m. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:5987 / 5991
页数:5
相关论文
共 22 条
  • [1] Large area deposition of ⟨100⟩-textured diamond films by a 60-kW microwave plasma CVD reactor
    Ando, Y
    Yokota, Y
    Tachibana, T
    Watanabe, A
    Nishibayashi, Y
    Kobashi, K
    Hirao, T
    Oura, K
    [J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 596 - 600
  • [2] Optical, thermal and mechanical properties of CVD diamond
    Coe, SE
    Sussmann, RS
    [J]. DIAMOND AND RELATED MATERIALS, 2000, 9 (9-10) : 1726 - 1729
  • [3] DIAMOND NUCLEATION ON UNSCRATCHED SILICON SUBSTRATES COATED WITH VARIOUS NON-DIAMOND CARBON-FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    FENG, Z
    BREWER, MA
    KOMVOPOULOS, K
    BROWN, IG
    BOGY, DB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) : 165 - 174
  • [4] Funer M, 1998, APPL PHYS LETT, V72, P1149, DOI 10.1063/1.120997
  • [5] Heidinger R, 2002, IEEE T PLASMA SCI, V30, P800, DOI 10.1109/TPS.2002.801558
  • [6] Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density
    Hemawan, K. W.
    Grotjohn, T. A.
    Reinhard, D. K.
    Asmussen, J.
    [J]. DIAMOND AND RELATED MATERIALS, 2010, 19 (12) : 1446 - 1452
  • [7] LOCALIZED EPITAXY OF DIAMOND ON (100) SILICON
    JOHN, P
    MILNE, DK
    ROBERTS, PG
    JUBBER, MG
    LIEHR, M
    WILSON, JIB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (12) : 3083 - 3087
  • [8] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA
    KAMO, M
    SATO, Y
    MATSUMOTO, S
    SETAKA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 642 - 644
  • [9] SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS
    KOBASHI, K
    NISHIMURA, K
    KAWATE, Y
    HORIUCHI, T
    [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 4067 - 4084
  • [10] An experimental study of high pressure synthesis of diamond films using a microwave cavity plasma reactor
    Kuo, KP
    Asmussen, J
    [J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (09) : 1097 - 1105