Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

被引：24

作者：

Petravic, M.

Gao, Q.

Llewellyn, D.

Deenapanray, P. N. K.

Macdonald, D.

Crotti, C.

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[2] Australian Natl Univ, Ctr Sustainable Energy Syst, Fac Engn & Informat Technol, Canberra, ACT 0200, Australia

[3] CNR, Ist Struttura Mat, Unita Staccata Trieste Basovizza, I-34012 Trieste, Italy

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 425卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2006.05.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s -> 1 pi* resonance of N-2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Gamma than in isolated N-2. A clear correlation between Gamma and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the pi* orbital into the matrix. (c) 2006 Published by Elsevier B.V.

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页码：262 / 266

页数：5

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