High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

被引：7

作者：

Ma, Yuanxiao ^{[1
]}

Tang, Wing Man ^{[2
]}

Han, Chuanyu ^{[3
]}

Lai, Pui To ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong 999077, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Hong Kong, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 05期

关键词：

high-k; NdNbO; pentacene organic thin-film transistors; FIELD-EFFECT TRANSISTORS; LANTHANUM OXIDE; MOBILITY; OXYGEN;

D O I：

10.1002/pssa.201700609

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pentacene organic thin-film transistors (OTFTs) using high-k NdxNb(1-x)O gate dielectric with different Nb contents (x=1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x=0.950, achieving a high carrier mobility of 1.95cm(2)V(-1)s(-1), small threshold voltage of -1.57V, small sub-threshold swing of 0.13Vdec(-1), and small hysteresis of 0.13V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd2O3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.

引用

页数：5

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