Hall effect and thermally stimulated conductivity in CdGeP2 crystals

被引：0
作者：
Gubanova, AA
Kryskov, TA
Sodeika, AS
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来源：
INORGANIC MATERIALS | 1996年 / 32卷 / 07期
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T [工业技术];
学科分类号：
08 ;
摘要：
Based on measurements of the Hall effect and thermally stimulated currents, the energy levels of electroactive centers in p-CdGeP2 crystals were found to be E(A1) = E(v) + (0.12 +/- 0.02) eV and E(A1) = E(v) + (0.20 +/- 0.02) eV for low-resistivity samples and E(A) = E(v) + (0.65 +/- 0.02) eV for high-resistivity samples. The energy levels of nonequilibrium carrier traps were found to be E(t) = E(v) + (0.07 +/- 0.02) eV for low-resistivity samples and E(t1) = E(v) + (0.21 + 0.02) eV and E(t2) = E(v) + (0.37 + 0.02) eV for high-resistivity samples.
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页码：702 / 704
页数：3
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