Differential mechanisms underlying the modulation of delayed-rectifier K+ channel in mouse neocortical neurons by nitric oxide

被引:29
作者
Han, NLR
Ye, JS
Yu, ACH
Sheu, FS
机构
[1] Natl Univ Singapore, Dept Biol Sci, Singapore 117548, Singapore
[2] Natl Univ Singapore, Univ Scholars Programme, Singapore 117548, Singapore
[3] Peking Univ, Hlth Sci Ctr, Dept Neurobiol, Beijing 100871, Peoples R China
[4] Peking Univ, Neurosci Res Inst, Beijing 100871, Peoples R China
关键词
D O I
10.1152/jn.01185.2004
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
The modulatory effects of nitric oxide (NO) on voltage-dependent K+ channels are intricate. In our present study, the augmentation and reduction of K+ currents by NO donor S-nitro-N-acetylpenicillamine ( SNAP) and pure dissolved NO was observed in dissociated neurons from mice neocortex with both whole cell and cell-attached patch clamp. By using a specific electrochemical sensor, the critical concentrations of NO that increased or reduced the channel activities were accurately quantified. Low concentrations of SNAP ( 20 mu M) or NO solution ( 0.1 mu M) enhanced whole cell delayed rectifier K+-current (I-K) and left the fast inactivating A current (I-A) unchanged. However, high concentrations of SNAP ( 100 mu M) and NO ( 0.5 mu M) reduced both I-K and I-A currents. In cell-attached experiments, a significant increase in channel open probability (NP0) was observed when using low concentrations of SNAP or NO. High concentrations of SNAP or NO dramatically decreased NP0. The increase in channel activities by low concentrations of SNAP was abolished in the presence of either inhibitors of soluble guaylate cyclase or inhibitors of cGMP-dependent protein kinase G, suggesting a link to the NO-cGMP signaling cascade. The reduction of channel activities by high concentrations of SNAP was reversed by the reducing agent dithiothreitol, implying a redox reaction mechanism. Thus both NO-cGMP signaling and a redox mechanism are involved in the modulation of I-K channel activity for neuron excitability.
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收藏
页码:2167 / 2178
页数:12
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