Effects of bias voltage on microwave plasma used for diamond growth

被引：11

作者：

Yugo, S ^{[1
]}

Ishigaki, N ^{[1
]}

Hirahara, K ^{[1
]}

Sano, J ^{[1
]}

Sone, T ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo 182, Japan

来源：

关键词：

bias method; diamond growth; microwave plasma CVD; needle substrate;

D O I：

10.1016/S0925-9635(99)00021-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tungsten-needle substrate was perpendicularly set onto a substrate holder. Diamond films were grown on the substrate by varying the length of the needle inserted into plasma. The results demonstrated that when the bias voltage was -50 V and the methane concentration was 5%, a diamond thin film grew for a needle length of 0.5 mm, and granular diamond grew for a needle length of 1 mm. Plasma potentials were measured while the bias voltage was varied. The plasma potential became negative at bias voltage of 0 V, and it changed to positive as the negative bias voltage increased. These results revealed that diamonds were grown near the boundary between the transition region surrounding the plasma ball and the ion sheath. In addition, the results also indicated that the bias voltage can control the density and energy of ions, electrons and radicals near the plasma, and therefore plays a role in providing optimal conditions for diamond growth. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：1406 / 1409

页数：4

共 6 条

[1]

Katsumata S., 1994, Diamond Films and Technology, V3, P199

[2]

KOIDL P, 1993, P 2 INT C APPL DIAM, P87

[3] INSITU GROWTH-RATE MEASUREMENT AND NUCLEATION ENHANCEMENT FOR MICROWAVE PLASMA CVD OF DIAMOND [J].