Investigations on Al/BaTiO3/GaN MFS structures

被引：8

作者：

Kumar, MS ^{[1
]}

Sumathi, RR ^{[1
]}

Giridharan, NV ^{[1
]}

Jayavel, R ^{[1
]}

Kumar, J ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, India

来源：

MATERIALS LETTERS | 2002年 / 52卷 / 1-2期

关键词：

gallium nitride; barium titanate; metal-ferroelectric-semiconductor; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0167-577X(01)00370-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A metal-insulator-semiconductor (MIS) device structure has been established on GaN by using BaTiO3, a ferroelectric material, as an insulating layer. The composition of the deposited ferroelectric layers was studied using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray (EDX) analysis. Fabricated Al/BaTiO3/GaN metal-ferroelectric-semiconductor (MFS) structures have been characterised through capacitance-voltage W-V) measurements. Improved C-V characteristics have been observed in comparison to other traditional oxide insulators. An inversion of GaN MFS structures has been attained just for the applied voltage of 5 V due to the high dielectric constant and large polarisation field of the gate ferroelectric layer. The bias stress measurements indicate a high stability of the ferroelectric material over a period of 10(4) s. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：80 / 84

页数：5

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