A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

被引：13
作者：
Walsh, Lee A. [1 ]
Hughes, Greg [1 ]
Hurley, Paul K. [2 ]
Lin, Jun [2 ]
Woicik, Joseph C. [3 ]
机构：
[1] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[3] NIST, Gaithersburg, MD 20899 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期
关键词：
P-B CENTERS; SILICON; INTERFACE;
D O I：
10.1063/1.4770380
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770380]
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页数：4
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