Antiferroelectric-like behavior in polycrystalline Pb(Zr0.2Ti0.8)O3-BiFeO3 multilayers prepared by sol-gel method

被引：0

作者：

Pintilie, L. ^{[1
]}

Stancu, V. ^{[1
]}

Dragoi, C. ^{[1
]}

Vlaicu, M. ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Magurele 077125, Romania

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2008年 / 10卷 / 11期

关键词：

Antiferroelectric; Multiferroic; Double loop; Interfaces;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(Zr0.2Ti0.8)O-3-BiFeO3 (PZT-BFO) multilayer structures were realized by sol-gel on Pt/Si substrate and their electrical properties were investigated using top Pt, Au and Cu electrodes. All multilayers start and end with PZT films. The polarization-voltage and current-voltage hysteresis loops resemble to those encountered in case of antiferroelectric (AFE) films, although component materials are both ferroelectric (FE). The AFE-like behavior is more clearly visible in the case of three-layer structures of PZT-BFO-PZT type, and it is not dependent of the metal used as top electrode. After fatigue cycling the polarization hysteresis apparently changes from characteristic AFE double-loop to FE single loop, although the four switching current peaks characteristic for an AFE behavior are still present in the current hysteresis. These results suggest the presence of an AFE interfacial coupling between the PZT and BFO layers.

引用

页码：3144 / 3149

页数：6

共 31 条

[1] Microstructure and electrical properties of (120)O-oriented and of (001)O-oriented epitaxial antiferroelectric PbZrO3 thin films on (100) SrTiO3 substrates covered with different oxide bottom electrodes [J].