Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

被引：4

作者：

Casagrande, L ^{[1
]}

Barnett, BM

Bartalini, P

Bell, WH

Borer, K

Bowcock, T

Buytaert, J

Chochula, P

Collins, P

Da Viá, C

Dijkstra, H

Dormond, O

Esposito, A

Frei, R

Granata, V

Janos, S

Konorov, I

Lourenço, C

Niinikoski, TO

Pagano, S

Palmieri, VG

Parkes, C

Paul, S

Pretzl, K

Ruf, T

Ruggiero, G

Saladino, S

Schmitt, L

Smith, K

Sonderegger, P

Stavitski, I

Steele, D

Vitobello, F

机构：

[1] LIP, P-1000 Lisbon, Portugal

[2] Univ Mainz, D-6500 Mainz, Germany

[3] Univ Lausanne, CH-1015 Lausanne, Switzerland

[4] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland

[5] Univ Bern, LHEP, Bern, Switzerland

[6] Univ Liverpool, Liverpool L69 3BX, Merseyside, England

[7] HEPHY, Vienna, Austria

[8] CERN, Geneva, Switzerland

[9] Tech Univ Munich, D-8000 Munich, Germany

[10] ETL, Tsukuba, Ibaraki, Japan

[11] CNR, Arco Felice, Italy

[12] Ist Nazl Fis Nucl, Naples, Italy

[13] Univ Naples, I-80138 Naples, Italy

[14] Ist Nazl Fis Nucl, Padua, Italy

[15] Univ Padua, I-35100 Padua, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 03期

关键词：

D O I：

10.1109/23.775519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenii: temperatures. A DELPHI microstrip detector, irradiated to a fluence of similar to 4 x 10(14) p/cm(2), no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.

引用

页码：228 / 231

页数：4

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