Robust spin crossover and memristance across a single molecule

被引：446

作者：

Miyamachi, Toshio ^{[1
,2
]}

Gruber, Manuel ^{[1
,3
]}

Davesne, Vincent ^{[1
,3
]}

Bowen, Martin ^{[3
]}

Boukari, Samy ^{[3
]}

Joly, Loic ^{[3
]}

Scheurer, Fabrice ^{[3
]}

Rogez, Guillaume ^{[3
]}

Yamada, Toyo Kazu ^{[1
,4
]}

Ohresser, Philippe ^{[5
]}

Beaurepaire, Eric ^{[3
]}

Wulfhekel, Wulf ^{[1
,2
]}

机构：

[1] Karlsruhe Inst Technol, Inst Phys, D-76131 Karlsruhe, Germany

[2] Karlsruhe Inst Technol, DFG Ctr Funct Nanostruct, D-76131 Karlsruhe, Germany

[3] UMR 7504 UdS CNRS, Inst Phys & Chim Mat Strasbourg, F-67034 Strasbourg 2, France

[4] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba 2638522, Japan

[5] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

来源：

NATURE COMMUNICATIONS | 2012年 / 3卷

关键词：

FE(PHEN)(2)(NCS)(2); CONDUCTANCE;

D O I：

10.1038/ncomms1940

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A nanoscale molecular switch can be used to store information in a single molecule. Although the switching process can be detected electrically in the form of a change in the molecule's conductance, adding spin functionality to molecular switches is a key concept for realizing molecular spintronic devices. Here we show that iron-based spin-crossover molecules can be individually and reproducibly switched between a combined high-spin, high-conduction state and a low-spin, low-conduction state, provided the individual molecule is decoupled from a metallic substrate by a thin insulating layer. These results represent a step to achieving combined spin and conduction switching functionality on the level of individual molecules.

引用

页数：6

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