Spin injection properties in trilayer graphene lateral spin valves

被引：22

作者：

Liu, Y. P. ^{[1
,2
]}

Idzuchi, H. ^{[2
,3
]}

Fukuma, Y. ^{[2
,4
]}

Rousseau, O. ^{[2
]}

Otani, Y. ^{[2
,3
]}

Lew, W. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[2] RIKEN, Adv Sci Inst, Wako, Saitama 3510198, Japan

[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[4] Kyushu Inst Technol, Frontier Res Acad Young Researchers, Iizuka, Fukuoka 8208502, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 03期

关键词：

TRANSPORT; METAL; ACCUMULATION; PRECESSION; RESISTANCE; BEHAVIOR;

D O I：

10.1063/1.4776699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical injection and detection of spin accumulation in trilayer-graphene/MgO/Permalloy lateral spin-valve (LSV) structure. Non-local spin valve signal is clearly observed in the LSV, indicating that spin coherence extends underneath all ferromagnetic contacts. We also show that low-resistivity graphene/MgO/Py junctions enable efficient spin injection and detection in LSV with high applied current density, which leads to large spin accumulation of 120 mu V at room temperature. A spin diffusion length of 1.5 mu m was obtained for the injector-detector separation dependence of spin valve signal measurements carried out at room temperature, while at T = 10 K, the diffusion length increases to 2.3 mu m. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776699]

引用

页数：4

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