Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

被引：41
作者：
Virmontois, Cedric [1 ]
Goiffon, Vincent [2 ]
Corbiere, Franck [2 ]
Magnan, Pierre [2 ]
Girard, Sylvain [3 ]
Bardoux, Alain [1 ]
机构：
[1] CNES, F-31401 Toulouse, France
[2] Univ Toulouse, ISAE, F-31055 Toulouse, France
[3] DIF, DAM, CEA, F-91297 Arpajon, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期
关键词：
Dark current; Radiation effects; Protons; Neutrons; Photodiodes; Active pixel sensors; CMOS image sensors; pinned photodiode (PPD); Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage dose (DDD); monolithic active pixel sensor (MAPS); ACTIVE PIXEL SENSOR; DEEP-SUBMICRON TECHNOLOGY; INDUCED DARK CURRENT; PROTON; IRRADIATION;
D O I：
10.1109/TNS.2012.2224129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2 x 10(6) TeV/g. Particle fluence up to 5 x 10(14) n.cm(-2) is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.
引用
收藏
页码：2872 / 2877
页数：6
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