A compact, analytical two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

被引：9
作者：
Chiang, TK [1 ]
机构：
[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 12期
关键词：
D O I：
10.1088/0268-1242/20/12/005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
On the basis of two-dimensional (2D) potential analysis with effective conducting path effect (ECPE), a compact, analytical model for the threshold voltage in cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs is derived. With various depths of the effective conducting path, the minimum channel potential Phi(deff,min) induced by ECPE is used to develop the threshold voltage model. Besides the increased depth of the effective conducting path, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of lambda L-1 and characteristic factor of beta. Both the high scaling factor and low characteristic factor are preferred to alleviate threshold voltage degradation. This paper not only provides a compact, analytical model but also offers efficient computation and analysis of the threshold voltage for the short-channel cylindrical, fully-depleted, SG MOSFETs.
引用
收藏
页码：1173 / 1178
页数：6
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