Tunability of UV electroluminescence for n-ZnO:Al/n--ZnO/i-MgO/n-GaN heterostructured light-emitting diodes

被引：5

作者：

Li, S. ^{[1
,2
]}

Fang, G. ^{[1
]}

Huang, H. ^{[1
]}

Long, H. ^{[1
]}

Wang, H. ^{[1
]}

Mo, X. ^{[1
]}

Dong, B. ^{[1
]}

Zhao, X. ^{[1
]}

机构：

[1] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Dept Elect Sci & Technol, Minist Educ China,Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China

[2] Wuhan Text Univ, Sch Elect & Elect Engn, Wuhan 430073, Hubei, Peoples R China

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2012年 / 107卷 / 02期

基金：

国家高技术研究发展计划(863计划);

关键词：

ZNO;

D O I：

10.1007/s00340-012-4966-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

-ZnO:Al/ (-)-ZnO/-MgO/-GaN heterostructured diodes have been fabricated by radio frequency magnetron sputtering. The electroluminescence (EL) of the -ZnO:Al/ (-)-ZnO/-MgO/-GaN diodes has been investigated. All EL spectra are dominated by ultraviolet (UV) emission peaked at around 368 nm. However, EL performances of the devices can be tuned through controlling the electrical parameters of ZnO:Al films. With the variation of the ZnO:Al films, EL spectra could evolve into random lasing action from conventional EL. The electrical parameters of the corresponding ZnO:Al films were researched, and the related UV emission mechanism is discussed in terms of the energy-band theory of the heterojunctions.

引用

页码：497 / 502

页数：6

共 16 条

[1] GaN-Based LEDs With AZO:Y Upper Contact [J].

Chen, P. H. ;

Lai, W. C. ;

Peng, Li-Chi ;

Kuo, C. H. ;

Yeh, Chi-Li ;

Sheu, J. K. ;

Tun, C. J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) :134-139

[2] Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN [J].

Cho, Chu-Young ;

Kang, Se-Eun ;

Kim, Ki Seok ;

Lee, Sang-Jun ;

Choi, Yong-Seok ;

Han, Sang-Heon ;

Jung, Gun-Young ;

Park, Seong-Ju .

APPLIED PHYSICS LETTERS, 2010, 96 (18)

[3] Solid-state lighting [J].

Humphreys, Colin J. .

MRS BULLETIN, 2008, 33 (04) :459-470

[4] InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti3O5/Al2O3 Distributed Bragg Reflector [J].

Jeong, Tak ;

Lee, Hyun Haeng ;

Park, Si-Hyun ;

Baek, Jong Hyeob ;

Lee, June Key .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (12) :8811-8814

[5] Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode [J].

Jiao, SJ ;

Lu, YM ;

Shen, DZ ;

Zhang, ZZ ;

Li, BH ;

Zhang, JY ;

Yao, B ;

Liu, YC ;

Fan, XW .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04) :972-+

[6] ZnO random laser diode arrays for stable single-mode operation at high power [J].

Liang, H. K. ;

Yu, S. F. ;

Yang, H. Y. .

APPLIED PHYSICS LETTERS, 2010, 97 (24)

[7] Random laser action in 3-D ZnO nanostructures [J].

Miao, L. ;

Tanemura, S. ;

Yang, H. Y. ;

Lau, S. P. ;

Xu, G. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1, 2009, 6 :S154-S157

[8] Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction [J].

Qiao, D ;

Yu, LS ;

Lau, SS ;

Redwing, JM ;

Lin, JY ;

Jiang, HX .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) :801-804

[9] The future of ultraviolet LEDs [J].

Sandhu, Adarsh .

NATURE PHOTONICS, 2007, 1 (01) :38-38

[10] Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN heterojunction light-emitting diodes [J].

Shih, Ying Tsang ;

Wu, Mong Kai ;

Li, Wei Chih ;

Kuan, Hon ;

Yang, Jer Ren ;

Shiojiri, Makoto ;

Chen, Miin Jang .

NANOTECHNOLOGY, 2009, 20 (16)

← 1 2 →