Industrial GaN FET technology

被引：14

作者：

Blanck, Herve ^{[1
]}

Thorpe, James R. ^{[1
]}

Behtash, Reza ^{[1
]}

Splettstoesser, Joerg ^{[1
]}

Brueckner, Peter ^{[1
]}

Heckmann, Sylvain ^{[1
]}

Jung, Helmut ^{[1
]}

Riepe, Klaus ^{[1
]}

Bourgeois, Franck ^{[1
]}

Hosch, Michael ^{[2
]}

Koehn, Dominik ^{[2
]}

Stieglauer, Hermann ^{[1
]}

Floriot, Didier ^{[3
]}

Lambert, Benoit ^{[3
]}

Favede, Laurent ^{[3
]}

Ouarch, Zineb ^{[3
]}

Camiade, Marc ^{[3
]}

机构：

[1] United Monolith Semicond GmbH, D-89081 Ulm, Germany

[2] Univ Ulm, Inst Electron Devices & Circuits, D-89081 Ulm, Germany

[3] United Monolith Semicond SAS, Orsay, France

来源：

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES | 2010年 / 2卷 / 01期

关键词：

GaN technology; RF; MMIC; Power;

D O I：

10.1017/S1759078710000073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III-V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed.

引用

页码：21 / 32

页数：12

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