1270V, 1.21 mΩ.cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

被引：10

作者：

Tanaka, Yasunori ^{[1
]}

Yano, Koji ^{[2
]}

Okamoto, Mitsuo ^{[1
]}

Takatsuka, Akio ^{[1
]}

Arai, Kazuo ^{[1
]}

Yatsuo, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, PERC, Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Yamanashi Univ, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4H-SiC; BGSIT; JFET; on-resistance; breakdown voltage;

D O I：

10.4028/www.scientific.net/MSF.600-603.1071

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage V-BR Of 1270 V at the gate voltage V-GS of -12 V and the specific on-resistance R-onS of 1.21 m Omega.cm(2) at V-GS = 2.5 V. The turn-off behaviors of BGSITs strongly depend on the source length W-S, which is the distance between the gate electrodes. The rise time t(r) of BGSIT for W-S = 1,070 pm is 395 nsec, while that for W-S = 210 mu m is 70nsec. From the 3D computer simulations, we confirmed that the difference in turn-off behavior came from the time delay in potential barrier formation in channel region because of high p(+) gate resistivity. The turn-off behaviors also depend on the operation temperature, especially for long W-S. On the other hand, the turn-on behaviors hardly depend on the W-S and temperature.

引用

页码：1071 / +

页数：2

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