Quantum dot lasers for silicon photonics [Invited]

被引：169

作者：

Liu, Alan Y. ^{[1
]}

Srinivasan, Sudharsanan ^{[2
]}

Norman, Justin ^{[1
]}

Gossard, Arthur C. ^{[1
,2
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHOTONICS RESEARCH | 2015年 / 3卷 / 05期

关键词：

RECOMBINATION; DEVICES;

D O I：

10.1364/PRJ.3.0000B1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects. (C) 2015 Chinese Laser Press

引用

页码：B1 / B9

页数：9

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