Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

被引：15
作者：
Shirolkar, Mandar M. [1 ]
Hao, Changshan [1 ]
Yin, Shiliu [1 ]
Li, Ming [1 ]
Wang, Haiqian [1 ]
机构：
[1] Univ Sci & Technol China, USTC SHINCRON Joint Lab Adv Thin Film Tech & Mat, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期
基金：
美国国家科学基金会;
关键词：
ELECTROSTATIC FORCE MICROSCOPY; OXIDE-FILMS; PHOTOIONIZATION; POLARIZABILITY; SEMICONDUCTOR; NANOCRYSTALS; MEMRISTOR; DEVICES; SILICON; CHARGE;
D O I：
10.1063/1.4811256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a correlation between surface null potential and bistable resistive switching effect in dilutely Al-doped ZnO nearly transparent thin film. The nearly symmetrical bistable resistive switching was observed at low operating potential (+/- 1V) with good repeatability and stability, driven by surface null potential. We report that above null potential, oxygen vacancies in the proximity of aluminum provide systematic development of conducting paths. While, the switching effect was also observed to be dopant driven in the proximity to +/- 1V. The phenomenon was explained using migration of Al3+ in ZnO matrix, which dominates over oxygen vacancies. (C) 2013 AIP Publishing LLC.
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页数：5
相关论文
共 44 条
[11]   Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes [J].
Fujimoto, Masayuki ;
Koyama, Hiroshi ;
Nishi, Yuji ;
Suzuki, Toshimasa .
APPLIED PHYSICS LETTERS, 2007, 91 (22)
[12]   Electrostatic force microscopy: principles and some applications to semiconductors [J].
Girard, P .
NANOTECHNOLOGY, 2001, 12 (04) :485-490
[13]   Nonpolar nonvolatile resistive switching in Cu doped ZrO2 [J].
Guan, Weihua ;
Long, Shibing ;
Liu, Qi ;
Liu, Ming ;
Wang, Wei .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :434-437
[14]   The influences of high energetic oxygen negative ions and active oxygen on the microstructure and electrical properties of ZnO:Al films by MF magnetron sputtering [J].
Hao, Changshan ;
Xie, Bin ;
Li, Ming ;
Wang, Haiqian ;
Jiang, Yousong ;
Song, Yizhou .
APPLIED SURFACE SCIENCE, 2012, 258 (20) :8234-8240
[15]   Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution [J].
Inoue, I. H. ;
Yasuda, S. ;
Akinaga, H. ;
Takagi, H. .
PHYSICAL REVIEW B, 2008, 77 (03)
[16]   Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films [J].
Jia, Junjun ;
Takasaki, Aiko ;
Oka, Nobuto ;
Shigesato, Yuzo .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)
[17]   Direct Observation and Measurement of Mobile Charge Carriers in a Monolayer Organic Semiconductor on a Dielectric Substrate [J].
Jiang, Yeping ;
Qi, Qiong ;
Wang, Rui ;
Zhang, Jun ;
Xue, Qikun ;
Wang, Chen ;
Jiang, Chao ;
Qiu, Xiaohui .
ACS NANO, 2011, 5 (08) :6195-6201
[18]   Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility [J].
Jung, Seungjae ;
Kong, Jaemin ;
Song, Sunghoon ;
Lee, Kwanghee ;
Lee, Takhee ;
Hwang, Hyunsang ;
Jeon, Sanghun .
MICROELECTRONIC ENGINEERING, 2011, 88 (07) :1143-1147
[19]   Ferroelectric Tunnel Memristor [J].
Kim, D. J. ;
Lu, H. ;
Ryu, S. ;
Bark, C-W. ;
Eom, C-B. ;
Tsymbal, E. Y. ;
Gruverman, A. .
NANO LETTERS, 2012, 12 (11) :5697-5702
[20]  
Kim K. M., 2011, NANOTECHNOLOGY, V25, P254002
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