Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

被引：15

作者：

Shirolkar, Mandar M. ^{[1
]}

Hao, Changshan ^{[1
]}

Yin, Shiliu ^{[1
]}

Li, Ming ^{[1
]}

Wang, Haiqian ^{[1
]}

机构：

[1] Univ Sci & Technol China, USTC SHINCRON Joint Lab Adv Thin Film Tech & Mat, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

基金：

美国国家科学基金会;

关键词：

ELECTROSTATIC FORCE MICROSCOPY; OXIDE-FILMS; PHOTOIONIZATION; POLARIZABILITY; SEMICONDUCTOR; NANOCRYSTALS; MEMRISTOR; DEVICES; SILICON; CHARGE;

D O I：

10.1063/1.4811256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a correlation between surface null potential and bistable resistive switching effect in dilutely Al-doped ZnO nearly transparent thin film. The nearly symmetrical bistable resistive switching was observed at low operating potential (+/- 1V) with good repeatability and stability, driven by surface null potential. We report that above null potential, oxygen vacancies in the proximity of aluminum provide systematic development of conducting paths. While, the switching effect was also observed to be dopant driven in the proximity to +/- 1V. The phenomenon was explained using migration of Al3+ in ZnO matrix, which dominates over oxygen vacancies. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 44 条

[1] Resistance switching properties of molybdenum oxide films [J].

Arita, M. ;

Kaji, H. ;

Fujii, T. ;

Takahashi, Y. .

THIN SOLID FILMS, 2012, 520 (14) :4762-4767

[2] Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2 [J].

Bogle, Kashinath A. ;

Bachhav, Mukesh N. ;

Deo, Meenal S. ;

Valanoor, Nagarajan ;

Ogale, Satishchandra B. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

[3] Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [J].

Bridger, PM ;

Bandic, ZZ ;

Piquette, EC ;

McGill, TC .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3522-3524

[4] Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures [J].

Calka, P. ;

Martinez, E. ;

Delaye, V. ;

Lafond, D. ;

Audoit, G. ;

Mariolle, D. ;

Chevalier, N. ;

Grampeix, H. ;

Cagli, C. ;

Jousseaume, V. ;

Guedj, C. .

NANOTECHNOLOGY, 2013, 24 (08)

[5] Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory [J].

Chen, Yu-Ting ;

Chang, Ting-Chang ;

Huang, Jheng-Jie ;

Tseng, Hsueh-Chih ;

Yang, Po-Chun ;

Chu, Ann-Kuo ;

Yang, Jyun-Bao ;

Huang, Hui-Chun ;

Gan, Der-Shin ;

Tsai, Ming-Jinn ;

Sze, Simon M. .

APPLIED PHYSICS LETTERS, 2013, 102 (04)

[6] Photoionization of individual CdSe/CdS core/shell nanocrystals on silicon with 2-nm oxide depends on surface band bending [J].

Cherniavskaya, O ;

Chen, LW ;

Islam, MA ;

Brus, L .

NANO LETTERS, 2003, 3 (04) :497-501

[7] Quantitative noncontact electrostatic force Imaging of nanocrystal polarizability [J].

Cherniavskaya, O ;

Chen, LW ;

Weng, V ;

Yuditsky, L ;

Brus, LE .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (07) :1525-1531

[8] Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications [J].

Choi, DH ;

Lee, D ;

Sim, H ;

Chang, M ;

Hwang, HS .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[9] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[10] Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device [J].

Du, Yuanmin ;

Pan, Hui ;

Wang, Shijie ;

Wu, Tom ;

Feng, Yuan Ping ;

Pan, Jisheng ;

Wee, Andrew Thye Shen .

ACS NANO, 2012, 6 (03) :2517-2523

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